Static performance analysis on UTB-SG and DG MOSFETs with Si and III–V channel materials

Abstract

Using 2-D numerical device simulator, the electrostatic performances are analysed for both ultrathin body (UTB) single gate (SG) and double gate (DG) MOSFETs. Various short channel parameters like subthreshold slope (SS), I on /I off ratio, and drain induced barrier lowering (DIBL), are investigated by varying the process parameters i.e. channel length (L g ), and doping concentration (N A ). From our results, UTB-DG MOSFET has better immunization to short channel effects (SCEs) than its counterpart SG configuration. Further investigation has made by using high mobility materials (GaAs, In 0.53 Ga 0.47 As) in DG MOSFET and found a great improvement in DIBL, drive current over Si.