Abstract
Vertically configured dynamic SIT memory seems to exhibit high speed and low power operation with high packing density. Basic operations of SIT memory is demonstrated by using a single cell sample and a 36 bit cell array sample particularly on the measurements of the retention characteristic with temperature variations and the speed performance. In SIT memory, the voltage source is not supplied to the storage capacitor, so that there can exist two operational modes, i.e., majority carrier accumulation mode and the depletion mode. The depletion mode is found to be superior to the accumulation mode in the memory retention characteristics. These two modes of SIT memory operations are compared with the conventional dynamic MOS RAM operations.
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