Abstract
Abstract The hydrogen-induced defects in single crystals of silicon grown by the floating-zone method in a hydrogen atmosphere, have been measured by high-energy synchrotron radiation section topography. The static Debye-Waller factor (SDWF) produced by hydrogen precipitates, which were formed in silicon under isochronal annealing, has been calculated on the basis of a statistical dynamical diffraction theory. Within a H2 molecule cluster model which we proposed for a precipitate, the size and density of hydrogen precipitates have been determined using the SDWF method and the results of infrared absorption spectrum. The character of the early stage of hydrogen precipitation indicates that hydrogen in p-type silicon is mobile and less stable, compared with that in n-type silicon.
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