Abstract
Static characteristics of digital combinational logic circuits and Schmitt triggers based on two-dimensional (2D) transition metal dichalcogenides (TMDs) have been systematically explored. Selenide tungsten (WSe2) transistors act as the P type metal oxide semiconductor (PMOS). Molybdenum disulfide (MoS2) transistors play the role as N type metal oxide semiconductor (NMOS). Based on the circuit simulations, we find that the output of the complementary metal oxide semiconductor (CMOS) inverters and Schmitt triggers can approach the supply voltage (VDD) and ground (GND), respectively. The key performance indexes of the two digital circuits have been studied with the change of the device parameters. The simulation results indicate that a thinner gate oxide thickness and a higher dielectric permittivity gate oxide material can increase the noise margin of the inverters. Besides, different width ratios of PMOS and NMOS can influence the noise margin of inverters. An inverter with a large PMOS whose width is 64 nm and a small NMOS whose width is 32 nm can improve the low level noise margin, but reduce the high level noise margin. In addition, a gate oxide thickness of 2.8 nm can broaden the hysteresis window of the Schmitt triggers obviously. The output curves of the Schmitt triggers change slightly with different gate oxide materials. The hysteresis window of the Schmitt triggers becomes narrow with decreasing of the supply voltage. The present work could help to design the standard cells with different requirements and improve the performance of digital integrated circuits using TMDs transistors.
Highlights
Two-dimensional transition metal dichalcogenides (2D-TMDs) field effect transistors (FETs) have been seen as the candidate in the generation of semiconductor industry for its excellent electrical properties
Based on the circuit simulations, we find that the output of the complementary metal oxide semiconductor (CMOS) inverters and Schmitt triggers can approach the supply voltage (VDD) and ground (GND), respectively
We focus on the static characteristic of CMOS inverters and Schmitt triggers using TMDs FETs
Summary
Two-dimensional transition metal dichalcogenides (2D-TMDs) field effect transistors (FETs) have been seen as the candidate in the generation of semiconductor industry for its excellent electrical properties It still lacks further study in optimization of TMDs FETs based digital integrated circuits. To be compatible with current electronics design automation (EDA) tools such as HSPICE, many researchers focus on the electrical behavior of TMDs FETs and device simulation models such as spice model.. David Jimenez used the traditional drift-diffusion theory to study the leakage current and surface potential models of single-layer TMDs transistors This model is suitable for long channel length and low power consumption.. They are accurate enough when used in circuit design simulations with TMDs FETs whose channel lengths are above 15 nm. This compact model fits well with the HSPICE simulator and corresponds with the nonequilibrium Green’s function (NEGF) date and the experimental data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have