Abstract
AbstractWe report on a design of GaN based HFET with a low‐conducting layer (LCL) coating. The LCL coating dramatically improves the electric field uniformity and increases the breakdown voltage. A major advantage is consistent control of the breakdown characteristics, which is expected to dramatically improve yield and reliability. Initial experimental studies demonstrated a three‐fold increase in the breakdown voltage compared with conventional HFETs. The LCL also leads to a much more uniform underlying channel depletion evidenced by a significantly lower HFET channel capacitance in the off state for the HFET based RF switches. This results in a lower loss and higher isolation. Another advantage is a faster transient enabled by LCL, which should improve efficiency and reduce loss for power HFET switches.(© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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