Abstract
Complex high-frequency (HF), σAC = σ1 − iσ2, and static, σDC, conductivities, as well as current-voltage characteristics, have been measured in p-Si/SiGe heterostructures with a low hole density (p = 8.2 × 1010 cm−2) at temperatures T = 0.3–4.2 K in the ultraquantum limit, when the filling factor is v 14 T).
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