Abstract
The present study reports on the development of permalloy thin films obtained by electrodeposition onto low-doped n-type silicon substrates. While changing from non-percolated clusters into percolated thin films upon increasing the electrodeposition time, the static and dynamic magnetic properties of the as-obtained structures were investigated. We found the experimental magnetic results to be in very good agreement with the simulations performed by solving the Landau-Lifshitz for the dynamics of the magnetic moment. For short electrodeposition times we found the static and dynamic magnetization behavior of the as-formed nanoclusters evidencing vortex magnetization with random chirality and polarization, which is explained in terms of dipolar interaction minimization. Indeed, it is herein emphasized that recent applications of ferromagnetic materials in silicon-based spintronic devices, such as logic and bipolar magnetic transistors and magnetic memories, have revived the possible utilization of low cost and simple electrodeposition techniques for the development of these upcoming hetero-nanostructured devices.
Highlights
Permalloy thin film electrodeposition was extensively investigated in the 1980s, aimed at applications in read head sensors in the substitution of ferrite-based materials, long used for magnetic recording
We have shown that the hemispherical geometry of magnetic nanoclusters infers a Dzyaloshinskii-Moriya [21,22] interaction, which favors the vortex magnetization in the hemispheres with diameters much lower than the values usually reported for nanodisks, allowing a high density of vortex magnetization configurations
We report on successful Permalloy electrodeposition films on highly resistive n-type silicon substrates and investigate the static and dynamic magnetization behavior of the as-fabricated structures as a function of the deposition time
Summary
Permalloy thin film electrodeposition was extensively investigated in the 1980s, aimed at applications in read head sensors in the substitution of ferrite-based materials, long used for magnetic recording. In the subsequent generation of read head magnetoresistive (MR) sensors, the film thickness needed to be very thin in order to prevent eddy currents and allow its application at high frequencies [2]. Sensor operation was based on anisotropic magnetoresistance (AMR), with permalloy resistivity varying as a function of the angle between the applied current and magnetic field, given by ρ = ρ0 + ∆ρ·cos θ, where ρ0 is the isotropic resistivity, ∆ρ is the MR, and θ is the angle between the applied current and magnetization direction [3]. The demand for improving the quality of permalloy thin films grown by electrodeposition and proper magnetic parameters for applications in industrial processes. Among the potential applications are the ferromagnetic materials in metal-based transistors, promising sensors with theoretical sensitivity estimated up to
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