Abstract
Structural disorder in solid-state materials has a direct impact on the complex of its physicochemical properties and functional characteristics of developed devices. The purpose of this work is to establish the influence of ion irradiation of SiO2 glass on static and dynamic disorder separately. Silica glasses implanted with carbon ions were studied using optical absorption spectroscopy and Raman spectroscopy. The temperature behavior of the fundamental absorption edge was considered in terms of the Urbach rule. The dose dependences of the root-mean-square atomic displacements caused by static and dynamic disorder were obtained. Analysis of Raman spectra confirmed the optical spectroscopy data and revealed a decrease in the medium-range order size along with topological changes in the SiO2 structure after ion implantation. The described step-by-step technique for quantitatively assessing the degree of static and dynamic disorder is universal and can be used to analyze other materials.
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