Abstract
The laser interferometric technique has been applied for the investigation of the quasi-static and dynamic components of the elastic deformation of crystalline silicon wafers during implantation of Ar + and He + ions. The absolute values of the integral stress and the amplitude of deformation vibrations are measured as a functions of implanted ions dose, energy and current density and compared with the dose dependencies of the surface acoustic waves (SAW) velocity in the implanted layer. The correlation between integral stress, amplitude of vibrations and SAW velocity variations is shown.
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