Static and dynamic characteristics of high voltage ( 3.5 kV ) IGBT and MCT devices

Abstract

We have fabricated high voltage ( 3.5 kV ) MCT and IGBT devices simultaneously on the same silicon wafer to compare their static and dynamic characteristics. A DMOS technology was adapted to allow for the realization of n-channel ( IGBT ) and p-channel ( MCT ) device structures in the same complimentary DMOS ( CDMOS ) process. The high voltage blocking capability was achieved using the same planar junction termination structure for both types of devices. MOS controlled thyristors offer destinctly lower on-state losses as IGBTs, although low on-state voltages in the range of 2 to 4 V were measured for the IGBT devices with 3.5 kV blocking capability. The maximum turn-off capability was found to be determined by the Si material parameters and is therefore identical for both devices.