Abstract
In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band picture. Here, based on an analysis of the quantum numbers and the overlaps of relevant states, as well as through a demonstration using the ladder and bilayer t-J models, it is shown that in a continuous Mott transition due to hole doping, the magnetically excited states of the Mott insulator generally emerge in the electron-addition spectrum with the dispersion relation shifted by the Fermi momentum in the momentum region where the lower Hubbard band is not completely filled. This implies that the dispersion relation of a free-electron-like mode in the electron-addition spectrum eventually transforms into essentially the momentum-shifted magnetic dispersion relation of the Mott insulator, while its spectral weight gradually disappears toward the Mott transition. This feature reflects the spin-charge separation of the Mott insulator.
Highlights
A significant feature in the Mott transition is the emergence of states in the Mott gap in the single-particle spectrum due to the doping of a Mott insulator [1]
Based on an analysis of the quantum numbers and the overlaps of relevant states, as well as through a demonstration using the ladder and bilayer t-J models, it is shown that in a continuous Mott transition due to hole doping, the magnetically excited states of the Mott insulator generally emerge in the electron-addition spectrum with the dispersion relation shifted by the Fermi momentum in the momentum region where the lower Hubbard band is not completely filled
This implies that the dispersion relation of a free-electron-like mode in the electron-addition spectrum eventually transforms into essentially the momentum-shifted magnetic dispersion relation of the Mott insulator, while its spectral weight gradually disappears toward the Mott transition
Summary
A significant feature in the Mott transition is the emergence of states in the Mott gap in the single-particle spectrum due to the doping of a Mott insulator [1]. The question of whether the doping-induced states in the two-dimensional (2D) Hubbard and t-J models in the parameter regime relevant to high-Tc cuprates near the Mott transition are essentially disconnected from the low-energy states by an energy gap or not has attracted considerable interest This is because this issue is related to the nature of the Mott transition and to the Fermi surface near the Mott transition (hole pockets or a free-electron-like Fermi surface) [6,15,16,17,18,19,24,25,26,27,33,35,37,38,39] and the anomalous features observed in high-Tc cuprates [6,7,8]. The doping concentration is denoted by δ(= Nh/Ns)
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