State diagram of spin-torque oscillator with perpendicular reference layer and planar field generation layer

Abstract

The state diagram of spin-torque oscillator (STO) with perpendicular reference layer (REF) and planar field generation layer (FGL) was studied by a macrospin model and a micro-magnetic model. The state diagrams are calculated versus the current density, external field and external field angle. It was found that the oscillation in FGL could be controlled by current density combined with external field so as to achieve a wide frequency range. An optimized current and applied field region was given for microwave assisted magnetic recording (MAMR), considering both frequency and output field oscillation amplitude. The results of the macro-spin model were compared with those of the micro-magnetic model. The macro-spin model was qualitatively different from micro-magnetics and experimental results when the current density was large and the FGL was non-uniform.