Abstract
AbstractWe present results of polarization‐resolved micro‐photoluminescence (μ‐PL) experiments on self‐organized InAs/GaAs (QDs). We have investigated how Coulomb interactions are modified by application of an electric field. We observed systematic variation of bright exciton splitting for different electric field configurations (applied in the quantum dot plane or along the sample growth axis). The results show also dependence of direct Coulomb interactions of carriers inside the dots, manifested by changes of PL line position of charged excitons (X+ and X‐) with respect to the neutral excitonic line. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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