Abstract
Self‐consistent Schrödinger–Poisson scheme is used to analyze the electronic transport in GaN/AlGaN nanowires containing a double‐barrier structure within the Landauer formalism. Results of the calculations indicate that the exchange–correlation potential leads to emergence of Stark resonances in the transport window. The shot noise characterizing the current fluctuations reveals sub‐Poissonian characteristics, significantly modified by the exchange–correlation contribution. As a consequence, we determine how geometric and material parameters affect those phenomena, which can be used to optimize the operation of such devices.
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