Abstract
The high-field electrical conduction in impure semiconductors has been treated, taking into account the conditions which would favour the occurrence of Stark ladders (SL). Some results of the authors previous treatment (Roy and Mahapatra 1983) for high-field electrical conduction in semiconductors have been used for the purpose. The carrier concentration in impure semiconductors has been obtained by considering the mechanisms of (i) Poole-Frenkel (PF) effect and (ii) field emission (FE) or tunneling. The aspects studied are the variation of current density with field and the relative influences of the PF effect and FE on the carrier concentration. The results are discussed critically, especially in the light of the experimental findings of Maekawa (1970).
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