Abstract
The effect of an applied stationary electric field on the band structure of GaNAsBi/GaAs quantum wells has been investigated using self-consistent calculation. Such study based on the optimization of N and Bi contents can be useful to improve physical properties of emitters or photodetector devices operating at 1.55μm. We have examined the quantum confined Stark effect on the shape of the confining potential, the Fermi level, the subband energies and their corresponding wavefunctions. We have also determined the oscillator strength and the absorption coefficient of the inter-band transitions and their dependences on the applied perturbation.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
