Standing-wave excited photoemission experiments on Si/MoSi2 multilayer mirrors in the soft x-ray regime: An analytical modeling approach

Abstract

Photoemission experiments were performed on Si/MoSi2 multilayers using soft x-ray standing waves for excitation. The combination of photoemission spectroscopy and standing-wave excitation results in a depth profile of the sample that is also sensitive to chemical states. The experimental data were analyzed using an approximate analytical, rather than a full numerical, method in order to more quickly yield results, as well as to calibrate and better understand the method. The important parameters in the resulting equations are discussed in detail. Thus, we quickly obtain access to the key parameters modulating the photoelectron intensity excited by x-ray standing waves. We demonstrate the analytical approach on a simple experimental test data set.