Standard AZ 5214E photoresist in laser interference and EBDW lithographies

Abstract

In this paper examples of the applicability of the standard AZ 5214E photoresist are shown. The resist is besides its sensitivity to UV radiation sensitive also to e-beam exposure. The arrays of patterns (holes and columns) were exposed in this photoresist by the experimentally produced Laser Interference Lithography method as well as by the Electron-Beam Direct Write Lithography. With both methods comparable results have been achieved with less than half micron spacing of the patterns, obtaining thus dimensions smaller than usually achieved by standard optical photolithography with the AZ 5214E photoresist.