Staggered Heterojunctions-Based Nanowire Tunneling Field-Effect Transistors for Analog/Mixed-Signal System-on-Chip Applications

Abstract

This paper presents the analog/RF performance for an III–V semiconductor-based staggered hetero-tunnel-junction n-type nanowire (NW) tunneling field effect transistor (n-TFET), for the first time. The device parameters for analog/mixed-signaling applications, such as transconductance (gm), transconductance-to-drive current ratio (gm/I DS ), output resistance (R out ), intrinsic gain and unity-gain cutoff frequency (fT) are studied for III–V based NW n-TFET, with the help of device simulator and compared with those for a similarly sized homojunction (HJ) NW n-TFET. The result reveals that the hetero-tunnel-junction n-TFETs outperform their HJ counterparts for analog/mixed-signal system-on-chip (SoC) applications.