Abstract
We study in this paper the epitaxial growth and electrical characterization of an n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode lattice matched to (001)-oriented InP substrate. First, the effects of molecular beam epitaxy growth temperature and group-V growth rates on the GaAsxSb1−x composition are characterized by means of X-ray diffraction (XRD). It is found that GaAsxSb1−x lattice constant is mainly determined by the Sb4 incorporation rather than the As4 one. After optimization, high quality In0.54Ga0.46As(Si)/GaAs0.52Sb0.48(Be) heterostructure is confirmed by XRD, Transmission electron microscope (TEM) and Secondary Ion Mass Spectroscopy (SIMS) profiles meeting requirements for sub-60mV/dec operating devices. Esaki tunnel diodes are then fabricated to be used as a prediction of Band-To-Band Tunneling (BTBT) for Tunnel Field-Effect transistors (TFETs). The results are compared to previously reported n+/p+In0.5Ga0.5As homojunction diodes, showing a ×60 factor improvement of BTBT current density for the same electric field with an excellent average Peak-to-Valley Current Ratio (PVCR) of 14.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
