Abstract

Microstructural analysis by crystal orientation mapping of bulk functional materials is an essential and routine operation in the engineering of material properties. Far and away the most successfully employed technique, Electron Backscattered Diffraction (EBSD), provides high spatial resolution information at the cost of limited angular resolution and a distorted imaging condition. In this work, we demonstrate a stage-rocked electron channeling approach as a low-cost orientation mapping alternative to EBSD. This is accomplished by automated electron channeling contrast imaging (ECCI) as the microscope stage physically tilts/rotates a sample through a reduced hemisphere of orientations followed by computational reconstruction of electron channeling patterns (ECP). Referred to as Orientation Mapping by Electron Channeling (OMEC), our method offers advantages in terms of local defect analysis, as it combines the advantages of selected area ECP (SACP) and ECCI. We also illustrate dynamic or “adaptive” sampling schemes to increase the throughput of the technique. Finally, we discuss the implications for sample analysis in which large 3D maps of ECCI images can be routinely constructed of challenging crystalline samples. As an electron channeling-based approach to orientation mapping, OMEC may open new routes to characterize crystalline materials with high angular and spatial resolution.

Highlights

  • EBSD analysis for reference was carried out on an FEI Quanta 650 FEG with an Oxford/HKL EBSD system

  • We have developed a new crystal orientation mapping method, OMEC, combining advantages of ECCI and SACP imaging, which enables orientation mapping over a large FOV with high angular range and distortion-free projection

  • We have demonstrated the method with up to seventy-degree angular imaging with micron-scale resolution, but much larger angular FOV and spatial resolution should be accessible with a more sensitive BSE detector and higher precision stage

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Summary

Results and Discussion

A stage-rocking ECP can be reconstructed by projecting the average contrast from each image onto a spherical surface as shown in Fig. 2A for a single-crystal silicon (100) sample This raw ECP clearly shows the Kikuchi-like bands indicating the nominal (100) sample orientation. Orientation agreement between the electron backscatter patterns (EBSPs) and the OMEC ECPs can be seen, showing the higher angular resolution and contrast inherent to channeling pattern imaging due to user control over the angular sampling with the tilt/rotation step size. This avoids the need for specialized indexing methods based on dynamical image simulations and dictionary pattern matching needed to accommodate the limited field of view in beam-rocked ECPs. no specialized distortion correction to account for the tilted gnomonic geometry of a standard EBSD pattern is necessary to correctly index the orientation. The large-data format and multiple interlinked contrast mechanisms characteristic of ECCIs may allow for the imaging of multiple complicated defects simultaneously, opening the quantification of difficult to analyze specimens

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