Abstract
Stacking faults are commonly observed with dislocations in the early stage of GaAs/Si hetero-epitaxial growth. However, it has not been clearly understood whether these come from mis-stacking of atoms or from the nucleation of partial dislocations. We suggest a simple model for stacking fault stability that depends on the thickness and surface smoothness of the GaAs epilayer. This model shows that the successive glides of edge partial dislocations play an important role in forming stacking faults in the GaAs epilayer. The morphology and distribution of stacking faults observed by cross-section transmission electron microscope (TEM) coincides with this analysis.
Published Version
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