Abstract
An experimental study for the growth of oxidation-induced stacking faults (OISFs) during silicon oxidation in at high temperatures and pressures was developed. As the oxidation temperature increases, the OISF length increases, and as the pressure increases, the length diminishes. These dependences upon temperature and pressure are different from those for oxidation in The most important difference is associated to the faults reduction when the gas partial pressure is increased, which is an opposite behavior to the one observed during silicon oxidation. These differences are explained in terms of the N distribution close to the silicon-oxide interface and also in terms of the N/O ratio within the oxide which should change as a function of temperature and pressure during the silicon oxidation. © 2002 The Electrochemical Society. All rights reserved.
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