Abstract

Chemical modifications on aromatic spacers of 2D perovskites have been demonstrated to be an effective strategy to simultaneously improve optoelectronic properties and stability. However, its underlying mechanism is poorly understood. By using 2D phenyl-based perovskites ([C6 H5 (CH2 )m NH3 ]2 PbI4 ) as models, the authors have revealed how the chemical nature of aromatic cations tunes the bandgap and charge transport of 2D perovskites by utilizing sum-frequency generation vibrational spectroscopy to determine the stacking arrangement and orientation of aromatic cations. It is found that the antiparallel slip-stack arrangement of phenyl rings between adjacent layers induces an indirect band gap, resulting in anomalous carrier dynamics. Incorporation of the CH2 moiety causes stacking rearrangement of the phenyl ring and thus promotes an indirect to direct bandgap transition. In direct-bandgap perovskites, higher carrier mobility correlates with a larger orientation angle of the phenyl ring. Further optimizing the orientation angle by introducing a para-substituted element in a phenyl ring, higher carrier mobility is obtained. This work highlights the importance of leveraging stacking arrangement and orientation of the aromatic cations to tune the photophysical properties, which opens up an avenue for advancing high-performance 2D perovskites optoelectronics via molecular engineering.

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