Abstract
By integrating thin film and nanospheres, the metal-semiconductor-metal ultraviolet photodetectors (MSM-UVPDs) were fabricated by stacking tungsten oxide (WO3) nanospheres on WO3 thin film deposited on sapphire substrates. The sensing cutoff wavelength was 350 nm in the UVA range. Compared the WO3 nanosphere/WO3 thin film MSM-UVPDs with the thin-film structured WO3 MSM-UVPDs, due to the high surface-to-volume ratio of WO3 nanospheres, the photoresponsivity at a wavelength of 350 nm was improved from 20.7 mA/W to 89.2 mA/W, the noise equivalent power was improved from 2.35 × 10−10 W to 6.10 × 10−11 W, and the detectivity was improved from 1.34 × 109 cmHz1/2W−1 to 5.19 × 109 cmHz1/2W−1.
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