Stacked structure dependence on resistive switching characteristics in sumanene molecular memory

Abstract

Nonvolatile memories using molecule (molecule memories) are attracting attention. This is because these materials are suitable for miniaturization and higher capacity of memories in terms of their properties and dimensions. We have already demonstrated that the metal–insulator–metal (MIM) devices with sumanene-inserted bilayer graphene show huge resistive switching characteristics. However, the reason why resistive switching occurs in the graphene/sumanene/graphene structure has yet to be clarified. In this work, to investigate the mechanisms of the resistive switching phenomenon in sumanene-inserted bilayer graphene, plural kinds of stacked MIM structures are fabricated and evaluated. As a result, the measurement results clearly show that the graphene/sumanene/graphene structure is indispensable in the resistive switching phenomenon. Furthermore, based on the temperature dependence of the resistive switching, it is confirmed that a significant I ON/I OFF ratio can be obtained at higher operation temperatures.