Abstract
Resistive Switching Memory The RuO2 electrode is used to suppress the selector degradation during the switching operation. The one selector-one resistive switching memory (1S1R) array using the selector with superior performance is fabricated to implement a hardware neural network. 1S1R effectively suppress sneak current through high nonlinearity of the selector. Three simple alphabets, “L”, “I”, and “X” are classified through the 1S1R array, and the proposed 1S1R device shows possibilities for neuromorphic applications. More details can be found in article number 2200656 by Cheol Seong Hwang and co-workers.
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