Abstract
We study the photoluminescence and impact of post-growth annealing of stacked,strain-free GaAs quantum dots fabricated by refilling of self-organized nanoholes usingmolecular beam epitaxy. Temperature- and power-dependent photoluminescence studiesreveal an excellent optical quality of the quantum-dot stack. After high-temperaturepost-growth annealing only slight blueshifts and an increase in full width at half-maximumof the photoluminescence peak are observed, indicating very high-temperature stability andcrystalline quality of the stacked GaAs quantum-dot structure.
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