Abstract
Abstract This study encompasses the development of a high-voltage and high-temperature–capable package for power electronic applications based on the embedding of silicon carbide (SiC) semiconductor devices in the ceramic circuit carrier such as the direct bonded copper (DBC) substrate. By sealing semiconductor devices into DBC substrates, high temperature, high voltage, and high current capability as well as high corrosion resistance can be achieved compared with the state-of-the-art printed circuit board (PCB) embedding technology. The power devices are attached with high-temperature stable solder and sinter material and are surrounded by thermal conductive ceramic and high-temperature–capable potting materials that enable the complete package to operate at 250°C or above. Furthermore, the single embedded packages can be stacked together to multilevel DBC topologies with increased voltage blocking characteristics. Thus, current limits of the PCB and low-temperature cofired ceramic–based multilayer solutions are exceeded and will be confirmed in the course of this study. This package is designed to carry out the maximal performance of SiC and future wide bandgap devices. It is a promising solution not only for applications in harsh ambient environments such as aerospace and turbine, geothermal well logging, and downhole oil and gas wells but also for hybrid electric/electric vehicle and energy conversion.
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