Stack-through silicon via dynamic power consumption optimization in three-dimensional integrated circuit

Abstract

Stack-through silicon via (TSV) used in three-dimensional integrated circuit has good temperature and heat transfer characteristics. A novel model for optimizing the dynamic power consumption based on stacked-TSV is proposed in this paper, in which delay, area and minimum aperture are comprehensively considered. After extracting single TSV parasitic electrical parameters, we analyze the influences of TSV size on multilayer TSV power consumption and delay performance, thereby building the hierarchical reduction TSV structure step by step. Moreover, the influences of TSV height and thickness of oxide layer are discussed. Results show that the model can significantly improve the dynamic power consumption at the expense of little delay. The power consumption optimization reduction is up to 19.52% with 5% delay penalty.