Abstract
In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2) nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) with electron back scattering diffraction (EBSD), and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%).
Highlights
Hafnium oxide (HfO2), called hafnia is a wide band gap metal oxide very promising for applications in various fields of science and technology[1,2] because of its physical and chemical properties and good thermal stability
The crystal structure of samples was investigated by X-ray diffraction (XRD) with the resulting patterns being analyzed with the Rietveld refinement method through Rietica software.[13]
The crystal shape and distribution of nanoparticle samples were characterized with scanning electron microscopy (SEM)with electron back scattering diffraction (EBSD) and transmission electron microscopy (TEM)
Summary
Hafnium oxide (HfO2), called hafnia is a wide band gap metal oxide very promising for applications in various fields of science and technology[1,2] because of its physical and chemical properties and good thermal stability. It is desirable to have a material in which the magnetic metallic ions are diluted in a semiconductor lattice. This can be achieved by doping a non-magnetic semiconductor (e.g., HfO2) with a transition-metal element (e.g., Fe) allowing the occurrence of a spin polarized current while still exhibiting all of the basic functions of an undoped matrix.[6] To obtain the desired results it is necessary that the dopant atoms must be evenly dissolved in the host lattice and the resulting ferromagnetism originates from the doped matrices
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