Abstract
The transparency of most electromagnetic shielding conductors is limited to the visible regime. Here, we demonstrate the high infrared transmittance (>50% at 4-μm-wavelength), low sheet resistance (<200 Ω □−1 at room temperature), and high shielding effectiveness (∼16.2 dB at 10 GHz for the X-band) of 20–90-nm-thick Sn-doped In2O3 films deposited on an (0001)-oriented Al2O3 substrate. The phase persists even at 700 °C in air. Thus, multifunctional Sn-doped In2O3 films on Al2O3 substrates will advance technology in the areas of military applications, invisible circuitry, smart windows, infrared sensors, and transparent solar cells working in extreme environment.
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