Abstract
Stable self-compliance property was observed in the AlOδ/Ta2O5−x/TaOy triple-layer resistive random access memory structure. The impact of AlOδ barrier layer was studied with different thicknesses. Endurance of more than 1010 cycles and data retention for more than 3 h at 125 °C were demonstrated. All the measurements were carried out without external current compliance and no hard breakdown was observed. Systematic analysis reveals the self-compliance property is due to the built-in series resistance of the thin AlOδ barrier layer. A model is proposed to explain this self-compliance property.
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