Abstract
AbstractWe conducted a first‐principles examination to determine the most stable position of an icosahedral B12 cluster near a Si(001) surface. We discovered that such a cluster is most stable when its center is located at the fourth layer position from the Si top surface where a Si dimer sits directly overhead. Scanning tunneling microscopy (STM) simulation revealed that Si dimers above the B12 cluster are distinguishable from other dimers in STM images at low sample bias voltages. © 2013 Wiley Periodicals, Inc. Electron Comm Jpn, 96(2): 50–56, 2013; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/ecj.10405
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