Abstract
We studied the bias-induced changes in the performance of the poly-Si thin-film transistor (TFT) by metal-induced crystallization of amorphous silicon through a cap layer (MICC) poly-Si. The p-channel poly-Si TFT exhibited a field-effect mobility of 101 cm/sup 2//V/spl middot/s and a minimum leakage current of <1.0/spl times/10/sup -12/ A//spl mu/m at V/sub ds/=-10 V. The MICC poly-Si TFT performance changes little by either gate or hot-carrier bias stress. The better stability appears to be due to the smooth surface of MICC poly-Si, which is /spl sim/2 nm that is much smaller than that (13 nm) of a laser-annealed poly-Si.
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