Abstract
Ag–N dual-acceptors doped p-type ZnO films were grown on glass substrates by the sol–gel method. The influence of dual-doping on the structural, electrical, and optical properties of samples was investigated in detail. The p-type conductivity of ZnO:(Ag,N) film is long-time stable. The resistivity of dual-doped ZnO:(Ag,N) film is much lower than that of mono-doped ZnO:Ag and ZnO:N films. ZnO homostructural p–n junction was fabricated by depositing an n-type ZnO layer on a p-type ZnO:(Ag,N) layer. The current–voltage characteristics show typical rectifying behaviors. Moreover, the ZnO:(Ag,N) film exhibits a good c-axis orientation, a high transmittance in the visible region, and a strong ultraviolet emission at room temperature.
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