Stable Organic Field Effect Transistors with Low-Cost MoO3/Al Source-Drain Electrodes

Abstract

Stable organic field effect transistors (OFETs) based on copper phthalocyanine (CuPc) are reported using MoO3/Al as source-drain top contacts. By annealing the fabricated device at 130°C in air, the mobility and the stability of the OFETs can be significantly improved in comparison with the untreated device. The heat-treated devices without encapsulation show a device storage stability of nearly 400 h while the untreated one only 183 h. This improvement is suggested to be mainly attributed to the reduction of the contact barrier between CuPc and the electrode, as well as the better alignment of CuPc molecules via post annealing.