Abstract
AbstractCrystalline silicon heterojunction solar cells based on hole‐selective MoOX contacts provide obvious merits in terms of the decent passivation and carrier selectivity but face the challenge of long‐term stability. With the aim to improve the performance and stability of solar cells with full area MoOX/metal contacts, a SiOX tunneling layer on silicon surface is intentionally formed by UV/O3 treatment and an indium tin oxide (ITO) film is sputtered as a high‐work‐function electrode. Before ITO sputtering, an ultrathin V2OX capping layer is introduced to efficiently prevent MoOX film from air exposure and the damage by sputtering bombardment. The insertion of SiOX, V2OX, and ITO keeps the work function of MoOX at a high level, which improves the hole selectivity as well as the stability of the contact. The p‐Si/SiOX/MoOX/V2OX/ITO/Ag solar cell demonstrates an efficiency of 20.0% with improved stability, which is the highest value for MoOX heterocontacts class on p‐type silicon to date.
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