Abstract

A fiber-based single-walled carbon nanotube (SWCNT) thin-film-transistor (TFT) has been proposed. We designed complementary SWCNT TFT circuit based on SPICE simulations, with device parameters extracted from the fabricated fiber-based SWCNT TFTs, such as threshold voltage, contact resistance, and off-/gate-leakage current. We fabricated the SWCNTs CMOS inverter circuits using the selective passivation and n-doping processes on a fiber substrate. By comparing the simulation and experimental results, we could enhance the circuit’s performance by tuning the threshold voltage between p-type and n-type TFTs, reducing the source/drain contact resistance and off current level, and maintaining a low output capacitance of the TFTs. Importantly, it was found that the voltage gain, output swing range, and frequency response of the fiber-based inverter circuits can be dramatically improved.

Highlights

  • Portable, wearable, patchable, and implantable systems have required high performance and flexible electronics

  • We optimized the cuit design using an Automatic Integrated Circuit Modeling (AIM)-SPICE simulation with TFT device parameters and CMOS inverte erational characteristics

  • For the rail-to-rail operations with high gain of logic inverte between the unpatterned gate electrode and the source/drain electrodes, and the bottom contact device configuration can lead to a large Ioff, including a high gate leakage and high source/drain contact resistance (Rc) (300 kΩ), respectively, which is inevitable because of the nature of the CMOS

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Summary

Introduction

Portable, wearable, patchable, and implantable systems have required high performance and flexible electronics. Flexible electronics, such as flexible printed circuit board (PCB)-based and polydimethylsiloxane (PDMS)-based electronics, are used for a variety of wearable electronic applications [1,2,3]. Electronic textiles (e-textiles) have been highlighted as the generation of smart and wearable electronics for human-friendly applications, because they are light weight, have deformability in movement, and have a wide range of applications within various fields [4,5]. A high degree of mechanical flexibility/durability and washability must be achieved for long-term use. High performance active devices, such as thin-film-transistors (TFTs) and light-emitting diodes (LEDs), should be developed for electronic circuit operations including fast-switching, amplification, and digital logics

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