Abstract
We report on the stable growth of ruthenium doped InP (Ru-InP) and its application in optical communication devices, grown by metal-organic vapor phase epitaxy. Ru-InP has semi-insulating characteristics for both n- and p-InP. The resistivity of the p/Ru/p-InP structure was 2×107Ωcm for a Ru concentration of 5×1017cm−3 in Ru-InP with a Ru-InP thickness greater than 1.0μm. However, the resistivity was very low when the Ru-InP thickness was less than 1.0μm. We investigated the Zn diffusion from p-InP to Ru-InP and found two Zn diffusion fronts in Ru-InP. Each diffusion front had a correlation with the Ru and Zn concentrations. By optimizing the current blocking layers in the Ru-InP and Zn-InP layers in buried-heterostructure lasers (BH-lasers), an output power over 10mW was realized for laser diodes, even when they were operated at 95°C.
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