Abstract
Graphene/h-BN hybrid structure is constructed using simple and efficient solution process and the field emission properties of the hybrid structure are examined. It is found that the hybrid structure exhibits much more stable electron field emission properties compared to the pure graphene films. A Significantly higher maximum emission current density is obtained from the hybrid structure. In addition, the hybrid structure displays much better emission stability, whose current fluctuation is less than 4.5%. These results indicate that the graphene/h-BN hybrid structure is a promising candidate of reliable electron emission source in vacuum nanoelectronics devices.
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