Abstract
We report for the first time the dc and radio frequency (RF) operation of a field-plated GaN-AlGaN metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET). At 2 GHz and an RF output power level of 19 W/mm (drain bias 55 V), the device exhibited a remarkably stable operation for times in excess of 100 h. In contrast, a similar geometry HFET from the same wafer continuously degraded from 17 W/mm down to 14 W/mm within the first 20 h. We attribute the stable performance of the MOSHFET at high microwave powers to the extremely low gate-leakage currents and the current collapse-free operation resulting from the field-plated design.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.