Stable charge retention in graphene-MoS 2 assemblies for resistive switching effect in ultra-thin super-flexible organic memory devices

Abstract

This study investigated the nonvolatile memory characteristics of devices fabricated with PMMA embedding composite of graphene and molybdenum disulphide, which were employed as charge-trapping centres. X-ray diffraction measurements, Scanning and transmission electron microscope image analysis along with other characterisation techniques were performed for the assessment of the nature of graphene MoS2 hybrid system. Bistable I-V characteristics of the device revealed stable and rewritable memory effect. A significantly high resistance ratio > 104 (Roff/Ron) was observed even after 10 days. The reliability and reproducibility of the devices were tested for 104 cycles. The conduction mechanisms of the fabricated nanocomposite based memory cell were discussed on the basis of experimental data using a charge trapping–detrapping mechanism in the graphene MoS2 hybrid. Owing to the increasing interest in the flexible electronics, bending tests were carried out on the devices fabricated on PET substrates. Bendability test at various bending diameters (40-5 mm) for 100 cycles was carried out to show the mechanical robustness of the device.