Abstract
In this work, gallium nitride (GaN) nanowires (NWs) were synthesized by chemical vapor deposition (CVD) process. The hybrid electrode showed the capacity up to 486 mAh g-1 after 400 cycles at 0.1 A g-1. Even at 10 A g-1, the reversible capacity can stabilize at 75 mAh g-1 (after 1000 cycles). Pseudocapacitive capacity was defined by kinetics analysis. The dynamics analysis and electrochemical reaction mechanism of GaN with Li+ was also analyzed by ex situ XRD, HRTEM, and XPS results. These results not only cast new light on pseudocapacitance enhanced high-rate energy storage devices by self-assembled nanoengineering but also extend the application range of traditional binary III/V semiconductors.
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