Abstract
Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heterojunction with inorganic ZnO protective layer. The prepared memory device has consistent DC endurance (500 cycles), retention properties (104 s), high ON/OFF ratio (105), and environmental stability. The observation of bipolar resistive switching is attributed to creation and rupture of the Ag filament. In addition, our conductive bridge random access memory (CBRAM) device has adequate regulation of the current compliance leads to multilevel resistive switching of a high data density storage.
Highlights
Organic electronic devices have been considered to be a possible contender in the field of photovoltaics, sensors, and next-generation memory devices, due to their excellent performance and characteristics of organic materials [1,2,3,4]
Organic resistive switching memory has a simple structure composed of organic material as an active layer that sandwiches between two electrode materials
Indium tin oxide (ITO) coated glass substrates were obtained from AMG, the Republic of Korea, and the dry powders of P3HT and PCBM were bought from Solaris Chem
Summary
Organic electronic devices have been considered to be a possible contender in the field of photovoltaics, sensors, and next-generation memory devices, due to their excellent performance and characteristics of organic materials [1,2,3,4]. Organic resistive switching memory has a simple structure composed of organic material as an active layer that sandwiches between two electrode materials This active material is composed of polymers, organic small molecules, and hybrid organic–inorganic nanocomposites [9,10,11]. Investigations on such devices have improved the resistive switching performance in terms of RON /ROFF ratio, retention time, multilevel data storage, and switching speed of the devices [12,13]. Due to environmental sensitivity, poor stability, and low device reproducibility of organic materials, it has been serving together with inorganic materials [18] To address these issues, many researchers have attempted to develop organic memory devices. Varun et al reported the flexible resistive switching of PVP-GO composite with ultrathin HfO2 layer to harness the combined effect of composite material and thin oxide layer for better controllability [19]
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