Abstract
A stable and very bright white organic light-emitting diode (WOLED) was fabricated with the structure ITO/m-MTDATA (30nm)∕NPB (30nm)/DPVBi (11nm)∕Alq3:DCJTB(50nm)∕LiF(1nm)∕Al(250nm). White light emission was achieved by combining blue and orange emissions emitted from DPVBi and Alq3:DCJTB layers, respectively. Inserting an m-MTDATA layer between ITO and NPB improved the charge balance in the recombination zone, improving the stability of the emission color of WOLED. The maximum luminance was 20590cd∕m2 at 13V with CIE coordinates of x=0.30, y=0.31. The maximum power and current efficiencies were 6.01lm∕W at 5V and 6.2cd∕A at 5V, respectively. Conversely, the WOLED without an m-MTDATA buffer layer exhibited unstable emission characteristic.
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