Stable and efficient all-inorganic quantum dot light-emitting diodes based on a double-layer electron transport layer

Abstract

Abstract The most advanced quantum light-emitting diodes (QLEDs) have achieved almost unity external quantum efficiency (EQE) due to organic materials for high transport efficiency, but organic materials are less stable and can lead to irreversible degradation of the devices. The use of stable inorganic hole-transporting layers (HTLs), such as NiOx, becomes a promising alternative. ZnO is a common electron-transporting material in QLEDs, which possesses high mobility and tunable conductivity properties, but ZnO-based QLEDs devices undergo loss of efficiency due to exciton bursting, poor shelf stability, and pronounced positive aging effects. SnO2, as a common electron-transporting material, has better stability than ZnO. In this work, the SnO2/ZnO dual electron transport layer strategy is adopted, which can reduce the non-radiative burst and aging behavior, and at the same time, the electron transport is regulated by adjusting the film thickness. Inorganic QLEDs with high external quantum efficiency (9.5%) as well as high operational stability have been fully realized. This strategy provides effective ideas for future high-performance display devices.