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Abstract
To satisfy the demand of high-speed and low-power non-volatile memory in the field of integrated circuits for in-memory computing, HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based ferroelectric tunnel junctions have been development with different film thickness and bottom electrodes. In this study, we investigated the influence of bottom electrode on the ferroelectric characteristics of HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based devices by the first-principles calculations and experimental results. First-principles analysis verified that the device with GaAs bottom electrode showed robust ferroelectric properties with remanent polarization of about 20 μC/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> due to high O-phase proportion. Meanwhile, the samples with GaAs and Pt bottom electrode display excellent retention properties owing to the high system energy. These results pave the way the development of HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -base ferroelectric tunnel junctions.
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