Abstract

As miniaturization of electronic devices is rapidly approaching the nanoscale, a deeper understanding of the electronic and structural properties of silicon nanoclusters, called to be the next-generation materials for circuit design, becomes of paramount importance. Herein, a detailed density functional theory study of the binding forces between [20]silafullerenes frameworks and their central halide ions is conducted, prompted by the recent synthesis of the first discrete Si20 dodecahedra stabilized by an endohedral chloride and valence saturation, [Cl@Si32Cl44]−, as well as the fabrication of the first electron transistor device based on a single silicon cluster. Although more intense stabilizing forces are obtained in the chloride-containing system, a small energetic difference with respect to bromide-centered one is found (4.76 kcal mol–1) suggesting the synthetic accessibility of the latter. An energy decomposition analysis is conducted revealing that in all cases (representing about 71%) the electros...

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.