Abstract
AbstractThe stability of remanent polarization (Pr) during multiple operations is critical for memory applications, as the degradation of Pr leads to misreading of stored information. In this letter, improved stabilization of Pr during field cycling in HfZrO4 (HZO)‐based ferroelectric devices by inserting a ZrO2 layer is reported. This optimization method is inspired by the fact that the wake‐up effect of HZO is not obvious. By inserting a ZrO2 layer, which prolongs the wake‐up period, the fatigue process is postponed. Thus, a stabilized Pr is achieved during cycling. The endurance limit can reach over 1010 cycles with no significant decrease in Pr (<5%), which is beneficial for improving the reliability of devices in practical applications.
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